General Semiconductor / Vishay Diodes >> BU2010-E3/51 半导体分立半导体二极管桥式整流器-产品快照
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General Semiconductor / Vishay Diodes >> BU2010-E3/51 半导体分立半导体二极管桥式整流器
General Semiconductor / Vishay BU2010-E3/51
General Semiconductor / Vishay Diodes >>
Bridge Rectifier, Single-Phase; 20A, 1000V, BU 4-Pin Inline Pkg., RoHS Overview Vishay General Semiconductor's new PowerBridge™ rectifiers are enhanced high-current-density bridge products with current ratings of 10 A to 25 A, and 600-V to 1000-V VRRM performance. When compared to larger-size bridge rectifiers on the market, the devices feature low thermal performance, which means that the devices transfer heat to heat sinks more effectively, reducing the need for larger-size heat sinks while offering the same power rating. The rectifiers feature an ideal bridge package choice for ac-to-dc rectification in switchmode power supply and adaptors, home appliances such as refrigerators, washing machines, air conditioners, and induction cookers, and AV systems. Features: Thin single in-line package Superior thermal conductivity Solder dip 260 °C, 40 s
Bridge Type : Single Phase Capacitance, Junction : 95 pF Configuration : Single-Phase Current Squared Time Rating : 239 A 2 s Current, Average : 20 A Current, Forward : 20 A Current, On-State, Non-Repetitive Peak : 240 A Current, Peak : 5 μA Current, Reverse : 110 μA Current, Surge : 240 A Dimensions : 22.3 x 4.1 x 18.8 mm Diode Type : Bridge Rectifier Height : 18.8 mm Length : 22.3 mm Mounting Type : Through Hole Number of Pins : 4 Package Type : BU Primary Type : Bridge Rectifier Resistance, Thermal, Junction to Case : 2.4 °C/W Temperature, Junction, Maximum : +150 °C Temperature, Operating : -55 to +150 °C Temperature, Operating, Maximum : +150 °C Temperature, Operating, Minimum : -55 °C Temperature, Operating, Range : -55 to +150 °C Voltage, Forward : 1.05 V Voltage, Repetitive Peak : 1 kV Width : 0.161" (4.1mm)
Semiconductors Discrete Semiconductors Diodes Bridge Rectifiers
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