Fairchild仙童 FGPF50N33BTTU 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FGPF50N33BTTU
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|---|---|---|
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 微信咨询，as10@gchane.com , QQ3350168184
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产品介绍
Fairchild仙童 FGPF50N33BTTU 晶体管
Fairchild FGPF50N33BTTU, 50 A 330 V, 1MHz, 3-Pin TO-220F
Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor IGBT Discretes & Modules, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Maximum Continuous Collector Current 50 A; Maximum Collector Emitter Voltage 330 V; Maximum Gate Emitter Voltage ±30V; Maximum Power Dissipation 43 W; Package Type TO-220F; Mounting Type Through Hole; Channel Type N; Pin Count 3; Switching Speed 1MHz; Configuration Single; Length 10.36mm; Width 2.74mm; Height 16.07mm; Dimensions 10.36 x 2.74 x 16.07mm; Minimum Operating Temperature -55 °C; Maximum Operating Temperature +150 °C;
IGBT Transistors
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